III–V antimonide optoelectronic platforms

Antimonide
optoelectronics,
end to end

Precision in chips · Intelligence in light · Vision for the future.

GK Semicoductor connects the lattice-matched 6.1 Å InAs·GaSb·AlSb material platform with epitaxy, device engineering, packaging and system integration.

Technology Platform

From epitaxy to delivery.

Material growth, wafer process, packaging and system integration are connected in one engineering chain.

Molecular beam epitaxy equipment in a clean engineering facility
Epitaxy Material design and molecular beam epitaxy establish the device foundation.

About / Core Capabilities

A full‑chain IDM platform for next‑generation infrared photonics.

Founded in 2020, GK Semicoductor is a frontier optoelectronic wafer and chip developer and manufacturer focused on III‑V compound semiconductors, particularly antimonide materials and superlattice structures.

2020 Founded around III‑V antimonide and superlattice optoelectronics.
20,000 m² Modern semiconductor fabrication and cleanroom footprint.
2×4 + 1×6 Three compound‑semiconductor process lines.
7 systems InAs, GaSb, InGaAs, InAsSb, GaAs, InP and InSb.

Research collaborations & platform credentials

  • National Semiconductor Laser Innovation Center
  • CAS Institute of Semiconductors
  • Taiyuan First Laboratory
  • Shanxi Key Laboratory

Featured Products

Three products from the formal catalog.

A long-focal MWIR system, a megapixel cooled detector and a high-power semiconductor laser bar from the published 55-product catalog.

Manufacturing & Quality

Built for connected manufacturing and delivery.

Two locations in Taiyuan and Jincheng connect three compound-semiconductor lines with epitaxy, device engineering, packaging and system integration.

Two locations, three lines

Taiyuan and Jincheng support two 4-inch lines and one 6-inch compound-semiconductor line.

20,000+ m² footprint

Cleanroom and manufacturing space supports the documented engineering and production chain.

Connected engineering chain

Material growth, device engineering, packaging and system integration are organized as one platform.

Seven material systems

InAs, GaSb, InGaAs, InAsSb, GaAs, InP and InSb are represented in the source record.